Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s.

نویسندگان

  • Dietmar Korn
  • Robert Palmer
  • Hui Yu
  • Philipp C Schindler
  • Luca Alloatti
  • Moritz Baier
  • René Schmogrow
  • Wim Bogaerts
  • Shankar Kumar Selvaraja
  • Guy Lepage
  • Marianna Pantouvaki
  • Johan M D Wouters
  • Peter Verheyen
  • Joris Van Campenhout
  • Baoquan Chen
  • Roel Baets
  • Philippe Absil
  • Raluca Dinu
  • Christian Koos
  • Wolfgang Freude
  • Juerg Leuthold
چکیده

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.

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عنوان ژورنال:
  • Optics express

دوره 21 11  شماره 

صفحات  -

تاریخ انتشار 2013